New Junction Barrier Schottky Diode Series from Cree


Cree, Inc., a market leader in silicon carbide power devices, announces the industry’s first commercially available Z-Rectm 1700-V Junction Barrier Schottky (JBS) diode products. Leveraging silicon carbide’s unique advantages over silicon to virtually eliminate diode switching losses, these diodes are targeted at high-voltage power conversion applications in motor drive, wind energy, and traction systems. Initial products in the 1700-V series include 10-A and 25-A JBS diodes in die form, ready for integration into 1700-V power modules ranging from 50 to 600-A. The new 1700-V JBS series can increase the efficiency, reliability and longevity of power systems while also reducing the overall system size, weight and cost.

“The 1700-V diodes extend our leadership in energy-efficient power systems for data center and solar power markets to new markets such as wind energy, train, tram, and electric vehicle power converters,” says Cengiz Balkas, vice president and general manager, power and RF. “Cree has the diodes of choice when high-efficiency power systems are a must. The advantages of silicon carbide are clear, and for high-voltage, high-frequency systems you can’t afford not to use SiC.”

“ABB has been closely involved with the development of SiC technology for many years,” according to Francisco Canales, senior principal scientist, ABB Corporate Research. “SiC diodes and switches provide an important step forward in technology that allows the increase of operation frequency, reduced size and weight while providing state of the art efficiency in applications such as motor drives and solar inverters. The 1700-V devices now being launched by Cree are an important step in the development of this technology.” For more information go to